| PART |
Description |
Maker |
| MBM2212-20 MBM2212-25 |
(MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| CXK1012 CXK1012P |
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
|
SONY[Sony Corporation]
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| CXK1024P |
MNOS 2K (256 X 8)-BIT NON-VOLATILE MEMORY
|
ETC
Sony Corporation
|
| HM472114-3 HM472114-4 HM472114P-3 |
1024-wordX4-bit Static Random Access Memory
|
Hitachi Semiconductor
|
| MCM5101 MCM5101C65 MCM5101C80 MCM5101P65 MCM51L01 |
CMOS 1024 BIT STATIC RANDOM ACCESS MEMORY
From old datasheet system
|
Motorola, Inc
|
| DS25LV02 DS25LV02RU DS25LV02R DS25LV02RR DS25LV02R |
Low-Voltage 1024-Bit EPROM
1024-Bit EPROM Operates Down to 2.2V and is Backwards-Compatible with the DS2502
|
MAXIX
MAXIM[Maxim Integrated Products]
|
| CY14B108L-BA25XI CY14B108L-BA45XI CY14B108L-BA25XI |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44 ROHS COMPLIANT, TSOP2-44
|
Cypress Semiconductor, Corp.
|
| AT90S4433-14 |
Data and Non-volatile Program Memory
|
ATMEL Corporation
|
| JT6N57 |
LSIs for Serial Port Controller with Built-in Non-Volatile Memory
|
TOSHIBA
|
